Formation of ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and laser annealing

Abstract

Formation of ultrashallow active junctions will be required in keeping the ongoing miniaturization of ULSIs. We reported the formation of p+/n ultrashallow junctions less than 10nm with the combination of low energy B ion implantation and non‐melt laser annealing. First a Ge pre‐amorphization implant was performed at energies of 3 keV, 6 keV with a dose of 3E14 /cm2. After the pre‐amorphization implant, a B implant was performed at 0.2 keV and 0.3keV with doses of 8E14 /cm2 and 1.2E15 /cm2. Double‐pulsed laser annealing was adopted at annealing process. B depth profiles are measured with SIMS analysis. In case of 0.3 keV B I/I with 3 keV Ge pre‐amorphization, ultrashallow junctions less than 10nm was successfully formed with the double‐pulse laser irradiation of 760 mJ/cm2. A reasonable sheet resistance of ∼550 Ω/□ was obtained in such a ultrashallow junction.