Abstract
The reliability of silicon-on-insulator (SOI) high-voltage devices and ICs has been confirmed experimentally by two accelerated tests for the long-term reliability of their blocking capability and electrostatic discharge (ESD) test. A lateral insulated gate bipolar transistor (IGBT) and p-channel metal-oxide-semiconductor field-effect- transistor (PMOS) for the accelerated tests, and a 200 V-class power IC for the ESD testing, were fabricated on SOI. The failure voltage of the ESD of the IC on SOI (SOI-IC) was compared with that of the IC on a junction isolated wafer (JI-IC), which had the same specification as the SOI-IC. The IGBT and PMOS could pass the two accelerated tests, but the test results of the PMOS depended strongly on its cell pattern. The failure voltage of ESD of the SOI-IC was lower than that of the JI-IC.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
