Abstract
We present a novel approach for the microscopic confinement and transport of excitons in GaAs quantum wells (QWs) using the moving strain field of a surface acoustic wave (SAW). We demonstrate that the band-gap modulation induced by the SAW strain field traps long-living indirect excitons in a double QW structure within sub-$\ensuremath{\mu}\mathrm{m}$-wide stripes parallel to the acoustic wave fronts and transports them over several hundreds of $\ensuremath{\mu}\mathrm{m}$.
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