Abstract
The large longitudinal magnetoresistance (MR) of high quality uniaxially deformed 1.5 „m thick polycrystalline bismuth lms deposited in vacuum on non-crystalline substrate and annealed at critical temperatures was investigated. The experimental results are interpreted on the basis of polycrystalline Bi thin lm model. The data suggest that in tellurium doped Bi lms the inuence of uniaxial deformation on MR can be up to 400%. It was found that strain and compression cause a considerably different dependence of MR on magnetic eld, which is explained in terms of electron intervalley repopulation in polycrystalline lm crystallites.
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