Transverse magnetoresistance of uniaxially deformed thin polycrystallinen- Bi films

Abstract

Large inuence of uniaxial stretch (strain) S and compression P on transverse and perpendicular resistivity ‰ and magnetoresistance (MR) of polycrystalline n-Bi lms was investigated. The calculations were performed on the basis of polycrystalline Bi thin lm model and electron intervalley repopulation in deformed lm crystallites. The calculations show that in n-Bi lms the inuence of P on ‰ can be many times larger because T -holes in Bi lms signicantly reduce the effect of deformation. It was found that S and P cause considerably different dependences of ‰ and MR on magnetic eld strength. The effect of P on the ‰ and MR is of opposite sign as compared to S and can be larger than that of S. In strong non-quantizing magnetic eld region the transverse ‰ appears to be independent of deformation. The investigated high-quality 1.5 „m thick Bi lms consisting of up to 200 „m length crystallites were deposited on non-crystalline substrate and annealed at critical temperature close to the lm melting temperature. The experimental results conrm the theoretical predictions.