Tensoelectric properties irradiated by the fast electrons n-Ge single crystals

Abstract

Tensoelectric properties of the uniaxially deformed along the crystallographic direction [100] n-Ge single crystals, irradiated by the flows of electrons , , and , with the energy of , were investigated. Mechanisms of changes in resistivity and mobility of current carriers under the uniaxial deformation for the studied n-Ge single crystals based on the measurements of tenso-Hall effect and infrared Fourier spectroscopy were established.The presence of tensoresistance for n-Ge single crystals, irradiated by the flow of the electrons , is associated with changes under the uniaxial pressure of electron concentration in the conduction band and holes in the valence band due to a decrease of the ionization energy of the deep level of the radiation defects which belongs to the complexes , at the uniaxial deformation. A significant increase of the effective mobility of carriers current in uniaxially deformed single crystals n-Ge is primarily related to the deforming redistribution of electrons between the branch of ‘light’ holes and the level . For single crystals n-Ge irradiated by the flows of electrons , which lead to the n-p conversion of the conductivity type of germanium, significant tensoresistance is observed only at the pressures . In this case, the resistivity of n-Ge decreases both due to an increase in the concentration of holes and their mobility under the deformation. Mobility of holes does not depend on deformation for uniaxial pressures , and a slight decrease in the resistivity of the researched single crystals n-Ge is caused by an increase in their concentration. Radiation-induced tensosensitivity at the room temperature for single crystals n-Ge can be used in technologies for creating uniaxial pressure sensors based on germanium. Obtained radiation effect of a significant increase in the mobility of current carriers for the uniaxially deformed n-Ge single crystals can find its practical application in the creation of ‘germanium’ channels of n-MOSFET and p-MOSFET transistors.