Abstract
The depth distributions of Bi + and Fe + ions implanted into SiN 1.375H 0.603, α-Si, Si 3N 4 and SiO 2 films at different angles were measured by Rutherford backscattering technique. The results show that: (1) the experimental mean projected range R p is in agreement with the calculated value by TRIM'98 within 9% for SiN 1.375H 0.603, Si 3N 4 α-Si cases; (2) the experimental range straggling Δ R p is larger than the calculated value by TRIM'98, the reason is not known; and (3) the depth distributions of implanted ions at different angles in all cases exhibit nearly Gaussian behaviour; the agreement of the extracted lateral spread with the calculated value is best for the case of Bi + ions implanted into SiO 2.
Published Version
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