Abstract
The properties of annealed hydrogenated amorphous silicon (a-Si:H) with and without Si 3N 4 encapsulation have been studied using Rutherford backscattering spectrometry, forward recoil analysis and scanning electron microscopy. Thermal processing of a-Si:H results in loss of hydrogen at temperatures above 375 °C with or without Si 3N 4 thin film encapsulation. With no encapsulation, the loss of hydrogen is preceded by the formation of bubbles which eventually break to form pinholes on the substrate. However, with Si 3N 4 encapsulation in the structure Si 3N 4/a-Si:H/Si no pinhole formation is observed.
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