Abstract
The electron concentration in Ga-doped liquid phase epitaxy (LPE) layers of Pb1−xSnxTe was studied as a function of the Ga concentration in the growth solution for various x compositions. Maximum electron concentrations of 5×1019 cm−3 and 2×1018 cm−3 were measured for x=0 and x=0.3, respectively—the highest values ever published for these LPE grown compositions. n+-p-p+ Pb1−xSnxTe homostructure diode lasers with a Ga-doped cladding layer were fabricated. The lasers showed extended wavelength ranges (11.5≤λ≤18.5 μm for x=0.24 and 8.2 μm≤λ≤11.2 μm for x=0.12), and low threshold current densities (30 A/cm at T=10 K). The threshold current density at low temperatures was found to be determined by excess tunneling currents.
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