GaAs/GaAlAs p-n-p-n negative-resistance laser with low threshold current density

Abstract

Six-layer heterostructure p-n-p-n switching lasers with low lasing threshold current densities (2500 A cm¯2 at room temperature) and good electrical turn-on properties have been produced. The paper deals with the analysis and practical realisation of good switching characteristics and the trade-offs necessary to achieve them while maintaining low threshold-current densities.