Abstract
We report on several approaches for extending the optical emission range for GaAs based heterostructures by using the self-organized InAs quantum dots. Placing the InAs quantum dots into InGaAs/GaAs quantum well led to achieving the 1.3 μm spontaneous emission and 1.26 μm lasing with extremely low threshold current density of 70 A/cm 2 at room temperature. Low temperature deposition of InAs quantum dots resulted in the formation of agglomerates of quantum dots which were the origin of the 1.75 μm emission at room temperature. FIR emission simultaneous to 0.94 μm lasing has been observed in InGaAs quantum dot lasers due to intersubband carrier transitions in quantum dots.
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