Abstract
Photoluminescence (PL) of self-organized InAs quantum dots (QDs) grown by conventional solid source molecular beam epitaxy (MBE) on a GaAs substrate was studied as a function of the deposition temperature. We have found that decreasing the growth temperature below the 480–500°C range leads to the appearance and increase in intensity of a long wavelength band in addition to the usual 1 μm line in a low-temperature PL spectrum. At the deposition temperature of 300°C this line dominates in the room temperature (RT) PL spectrum and its peak position is 1.75 μm. TEM studies have shown that the origin of this line are agglomerates of QDs which are formed in two preferential chain- and cluster-like shapes.
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