Long-term radiation effects in GaAs microwave devices exposed to pulsed ionizing radiation

Dmitry Gromov,Vadim Elesin,P Yermolov

doi:10.1051/itmconf/20193010005

Abstract

The investigation results of the GaAs microwave devices characteristics under pulse irradiation are presented. The study covers the field effect transistor with Schottky barrier, pseudomorphic high-electron mobility transistors and resonant tunnelling diodes implemented in GaAs technology processes. It has been demonstrated that GaAs MESFET, pHEMT and RTDs may show the long-term parameter recovery undo pulsed ionizing exposure.

Highlights

The microwave monolithic integrated circuits (MMIC) based on A3B5 semiconductor compounds are widely used in equipment operating in radiation environment.GaAs pseudomorphic high-electron mobility transistors technology processes are suitable for low-noise and middle-power amplifiers design as well as classical GaAs field effect transistor with Schottky barrier (MESFET) providing high frequencies and low noise figure
The investigation results of the GaAs MESFET, pseudomorphic high-electron mobility transistors (pHEMT) and resonant tunnelling diodes (RTD) test structures under pulse ionization exposure are presented in this paper
The GaAs MESFET and pHEMT drain current response to ionizing gamma irradiation are shown in Fig. 3 and 4

Summary

Introduction

The microwave monolithic integrated circuits (MMIC) based on A3B5 semiconductor compounds are widely used in equipment operating in radiation environment.GaAs pseudomorphic high-electron mobility transistors (pHEMT) technology processes are suitable for low-noise and middle-power amplifiers design as well as classical GaAs field effect transistor with Schottky barrier (MESFET) providing high frequencies (up to 100 GHz) and low noise figure (less than 0.4 dB@10 GHz). The semi-insulating GaAs substrate is used in production of these MMICs in the majority of cases. The investigation results of the GaAs MESFET, pHEMT and RTD test structures under pulse ionization exposure are presented in this paper.

Results

Conclusion