Abstract
High-temperature DC accelerated life tests on AlGaAs/InGaAs/GaAs pseudomorphic low-noise HEMTs were performed at three temperatures. It was found that the pseudomorphic HEMT is as reliable as the GaAs MESFET and GaAs conventional HEMT. Based on a failure criterion of -10% gm, the activation energy is 1.74 eV and the projected life at 150 degrees C is about 4*10/sup 6/ hours. The failure mechanism was found to be dominated by source resistance increase. >
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