Abstract
Considering physical mechanisms, an electro-thermal effect model of GaAs pseudomorphic high electron mobility transistor (PHEMT) was proposed. The model included PAD capacitances, intrinsic elements and extrinsic elements, which represented the relationship of performance parameters to physical structure and temperature. By using this model, the effects of temperature to devices performance parameters could be analyzed, and the device's structure and materials' parameters could be optimized. A typical GaAs PHEMT was simulated in the EDA software. Thus, DC I-V characteristics and small-signal S parameters of PHEMT under varied temperatures could be given.
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