Abstract
This letter reports the design, fabrication, and evaluation of logic gates including NAND and NOR gates which are composed of electrically driven nanoelectromechanical (NEM) switches. These logic gates are formed by four NEM switches consisting of four cantilevers, two input ports, two source ports, and an output. Devices are successfully fabricated by a combination of electron beam lithography, deep reactive ion etching (RIE), and selective tungsten (W) chemical vapor deposition. Truth tables of NAND and NOR are examined and demonstrated. © 2018 Institute of Electrical Engineers of Japan. Published by John Wiley & Sons, Inc.
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