Abstract
Anomalous optical properties of Zn1−xCdxSe/ZnSe strained-layer single quantum wells (SQWs) fabricated on cleaved GaAs(110) surfaces in ultrahigh vacuum by molecular beam epitaxy have been investigated. From the temperature-dependent photoluminescence measurement, the origins of localized excitonic emissions of two kinds of SQW structures with different Cd compositions are suggested. Localization centers of SQWs with low Cd composition (14%) are mainly originated by the well thickness fluctuation. However, SQWs with high Cd composition (27%) showed localized excitonic emissions at low temperature due to the Cd composition fluctuations rather than the lack of thickness uniformity of the well layer. Estimated averaged depths of localization of excitons by model calculations are 9 and 14 meV for the wells with 14% and 27% Cd compositions, respectively.
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