Abstract
Growth of ZnSe/ZnSSe and ZnCdSe/ZnSSe strained-layer single quantum wells (SQWs) has been carried out by metalorganic molecular beam epitaxy (MOMBE) under in situ RHEED observations. ZnSe/ZnSSe SQWs exhibited intense and sharp photoluminescence (PL) at 4.2 K. The linewidth of a ZnSe(28Å)/ZnS 0.1Se 0.9 SQW is 1.2 meV, which is the narrowest value ever reported for any ZnSe-based quantum wells with similar structures. In contrast to ZnSe/ZnSSe SQWs, ZnCdSe/ZnSSe SQWs showed intense excitonic emission with a relatively large linewidth at 4.2 K. No evidence for the presence of monolayer fluctuations has been observed in both kinds of SQWs despite the high quality of the excitonic features. The interface qualities of the SQWs are discussed in terms of the PL linewidth.
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