Abstract
We have investigated the exciton spin relaxation in a GaInNAs∕GaAs quantum well. The recombination from free and localized excitons is resolved on the basis of an analysis of the photoluminescence characteristics. The free exciton spin relaxation time is measured to be 192ps at 10K, while the localized exciton spin relaxation time is one order of magnitude longer than that of the free exciton. The dependence of the free exciton spin relaxation time on the temperature above 50K suggests that both the D’yakonov–Perel’ and the Elliot–Yafet effects dominate the spin relaxation process. The temperature independence below 50K is considered to be due to the spin exchange interaction. The ultralong spin relaxation time of the localized excitons is explained to be due to the influence of nonradiative deep centers.
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