Abstract
We have determined the spin relaxation dynamics of electrons, holes and excitons in GaAs quantum wells by means of subpicosecond studies of the photoluminescence polarization. Our measurements demonstrate that the usual image of instantaneous hole-spin relaxation is not valid in 2D systems. For electrons, the spin relaxation rate is considerably larger than the corresponding value in p-doped bulk GaAs. The processes of spin relaxation of free excitons are far more complicated than those of free carriers: we find that many-body effects play an important role in the spin relaxation of excitons.
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