Abstract
The spectroscopy of the local vibrational modes (LVMs) of light-mass impurities in semiconductors is a powerful probe of the defects that contain them. The frequency shifts of the vibrational lines that result from isotopic substitutions provide a means to identify the vibrating impurity and its nearest neighbors. Additional perturbations such as secondary illumination, uniaxial stress, and hydrostatic pressure enhance the capabilities of LVM spectroscopy for the determination of the structure and microscopic properties of a defect center. The combination of vibrational spectroscopy with complementary theory provides a strategy that often reveals the detailed bonding configuration of a defect that contain the light elements. Once an LVM of an impurity has been identified, vibrational spectroscopy can be used to monitor the impurity’s chemical reactions.
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