Abstract
High resolution infrared absorption measurements of the localized vibrational mode (LVM) of light substitutional impurities in compound semiconductors have provided direct spectroscopic evidence for the impurity site location in the lattice without the need for supplementary measurements. Additional structure arises whenever the impurity is surrounded by differing isotopes of the nearest neighbor (nn) host atoms as opposed to the single LVM line that occurs when the nn are composed of a single isotope. For the examples of carbon and silicon in GaAs, the advantages of sensitivity and nondestructive nature are explored as well as the problems in obtaining an accurate calibration to the actual impurity concentration. Various influences on the LVM measurement considered are the effect of sample temperature, instrument resolution, and mathematical manipulations to the data. Finally, other materials are considered in light of the possible potential for application of this new feature of the LVM technique.
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