Abstract
Local photoconductivity characterizations have been carried out on planar interdigitated metal-semiconductor-metal (MSM) devices fabricated on homoepitaxial CVD diamond for UV application. For this purpose a deuterium light source with an integrated UV fibre was combined and adapted to a conducting probe atomic force microscope (CP-AFM) tool. In this study, photocurrent was evidenced by local electrical resistance mapping measurements and analyzed as a function of the applied voltage and time.
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