Local modification of NaCl thin films on Cu(111) under different bias voltages

Abstract

The local modification of NaCl thin films on Cu(111) under different bias voltages is investigated using a scanning tunneling microscope (STM) at room temperature. We find that the type of modification of NaCl thin films is dependent on sample bias voltage ( V s). Defects in a triple-layer-thick NaCl film are destabilized and repelled away from the region beneath an STM tip by applying V s in the range of 0.3 V ≤ | V s| ≤ 0.5 V. When V s is larger than + 1.2 V or smaller than − 4.0 V, the removal of NaCl films takes place and a bare Cu surface appears. In this case, the removed NaCl is transferred to the STM tip and can be supplied back to the surface from the STM tip. The redeposition of NaCl enables not only the reformation of single-crystalline NaCl films on a bare Cu surface but also the formation of additional NaCl films on a clean NaCl film surface.