Abstract
The local modulation of exchange bias in resistive switching structure Co/CoOx/HfOx/Pt is reported, where CoOx/HfOx serves as the storage medium and Co behaves as the bottom (positive) electrode. The stack shows the exchange bias effect for the coupling at the Co/CoOx interface at the high resistance state. The formation of metallic Co or Co‐rich CoOx conductive filaments in the CoOx layer at the low resistance state leads to the bi‐hysteresis loops, reflecting the manipulation of exchange bias at local positions, where the formation of Co‐based filaments and the Co layer just below the filaments have no pinning effect. Besides, an oxidation–reduction process occurs in the Co layer, producing the reversible variation of saturated magnetization for the high/low resistance states. The electrochemical mechanism accounts for both local manipulation of exchange bias and changeable saturated magnetization. This work provides a different avenue for designable memories and magneto‐electric coupling devices.
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