Liquid phase epitaxy of AlGaInSb

Abstract

Epitaxial growth of the AlGaInSb pseudo-ternary on GaAs, GaSb and InSb substrates was investigated. The LPE growth was performed using In- and Ga-rich melts and different growth parameters such as cooling rate, supercooling, etc. The heteroepitaxial systems were evaluated by several methods; the growth morphologies and layer thickness were investigated by scanning electron microscopy, the composition of the quaternary was determined by X-ray microanalysis using both energy and wavelength dispersive analysis, and the lattice matching and layer perfection were analysed using X-ray rocking curves. It was demonstrated that good quality AlGaInSb epitaxial layers and p-n junctions were formed using In-rich melts and GaSb substrates.