Abstract
ABSTRACTZnTe has gained attention as a promising material for short wavelength optoelectronic applications. Unlike ZnSe, ZnTe can be doped p-type but not n-type. There are few reports detailing the growth and doping of ZnTe films through the MOVPE technique. We present growth and doping studies for ZnTe formed through low pressure MOVPE. Dimethylzinctriethylamine and diisopropyltelluride were chosen as the metalorganic precursors. Growth studies were carried out on both GaAs (100) and GaSb (100) substrates. Growth morphology was very sensitive to both the lattice mismatch and the initial surface preparation. This is particularly evident on the GaSb substrates. ZnTe growth temperatures ranged from 340 to 420°C, and growth rates of up to 1 μm/hour were achieved. ZnTe was found to be readily doped using tertiarybutylphosphine, with p-type concentrations ranging from 4×1016 cm−3 to 2x1019 cm−3, and corresponding room temperature hole mobilities between 55 and 12 cm2/V-sec. Tertiarybutylphosphine was also observed to significantly improve the surface morphology for growths on GaSb substrates.
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