Abstract
Epitaxial layers of GaxIn1-xSb have been gown on GaSb and/or InSb substrates over the whole composition range. The influences of the growth conditions on the crystalline qualities of GaxIn1-xSb have been investigated by an optical microscope and the X-ray Kossel patterns. Single crystalline layers can be gown in the composition range, 0≤x≤0.93 on (111) InSb substrates and in the range, 0.70≤x≤1 on (100) GaSb substrates. The etch pit density in the grown layer was about 107 cm-2, independent on the substrates and composition x. A considerable increase in the etch pit density in the substrate was observed after epitaxial growth. Ga was detected in the InSb substrate after epitaxial growth.
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