Abstract
Based on MOSFETs with four different gate stacks, we extract the oxide trap density and transconductance from the low frequency noise and DC transfer characteristics at room temperature, respectively. With the same gate stacks, Hall mobility as a function of carrier density is and the critical density is extracted at low temperatures. These physical quantities are analyzed and correlated explicitly, offering a method to qualitatively compare the quality of the four gate stacks for cryogenic MOS devices, and providing further insight into the material physics at cryogenic temperatures.
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