Line-Edge Roughness Effects on the Electronic Properties of Armchair Black Phosphorene Nanoribbons

Abstract

In this article, tight binding model and nonequilibrium Green’s function technique have been used to investigate the electronic properties of armchair black phosphorene nanoribbons in ballistic transport regime as well as in the presence of line-edge roughness. The results indicate that although the ballistic electrical conductance is almost independent of ribbon width for the narrow ribbons and has no significant changes by temperature, at the presence of line-edge roughness, the electrical conductance varies by temperature and could be highly dependent on the ribbon width, especially in the case of long channels. In contrast to the graphene nanoribbons in which the line-edge roughness limited effective mean free path (MFP) is about tens of nanometer, in the black phosphorene nanoribbons, the effective MFP could be as high as <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${2}~\mu \text{m}$ </tex-math></inline-formula> in ribbons with width of about 5 nm. For ribbons wider than 3 nm, the line-edge roughness scattering is almost negligible in comparison with electron–phonon scattering.