Abstract
This paper reviews various light-induced metastable effects in a a-Si: H : changes in dark conductivity (Staebler-Wronski effect), increased spin resonance signal due to dangling bonds, reduced luminescence efficiency, emergence of emission at ≈0.8 eV , and also field-induced observations. The defects can be produced not only by irradiation with visible light, but also by X-rays, electron or ion bombardment, and even by ambipolar injection.
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