Light Sensors Based on Silicon Nanowires

Abstract

The article deals with the synthesis of silicon nanowires by the method of metal-assisted chemical etching (MACE). The purpose of this work is to use in light sensors silicon nanowires that synthesized by the MACE. To achieve this goal, it was necessary to synthesize silicon nanowires by the MACE and to study their structural features, to obtain diode structures based on silicon nanowires and to study their sensitivity to visible radiation, to establish the influence of technological parameters of the MSHT process on the sensitivity of photo sensors and sensors. Today, nanostructures are obtained by the method of reactive ion etching, electrochemical etching and plasma implantation. However, most of these methods require sophisticated process equipment. Metal-assisted chemical etching (MACE) method is very promising for nanostructures creation. Two-stage MACE was used to make the samples. In the first stage, silver nanoparticles were deposited on the surface of single crystalline silicon. In the second stage, the samples were etched in a solution of water, hydrogen peroxide and hydrofluoric acid and, as a consequence, a structured surface was obtained. It should be noted that the samples were treated at different times of each of the stages of MACE. Based on the obtained samples, diode light sensors with different photoelectric parameters were synthesized. For the sensors obtained, the sensitivity was calculated in the photodiode and photogenerator modes, and the volt-ampere, luxury-ampere characteristics and dependences of the current density on the illumination density were constructed. structured silicon has a mesh-like appearance, where the dark regions are gaps (pores) and the light ones are silicon (pore walls, nanowires). First, compare the samples with different deposition times. It is seen that as the deposition time of the particles increases from 10 to 40 s, a more developed silicon surface is formed. Also, with the duration of deposition 40s on the silicon surface there are needle-like formations, which according to the results in the work are silver dendrites. All the above characteristics were analyzed for the effect of the deposition time of silver particles t1 and etching time t2 on them. Studies have shown that the optimum technological conditions of metal assisted chemical etching of silicon for using in light sensors are the following conditions: the deposition time of silver particles 40c, etching time 30 min, the content of hydrogen peroxide in the second solution of 0.8 ml. This mode of synthesis of the structuring of silicon substrates provides maximum photosensitivity ratios both in the photodiode (1.53 mA / lmV) and in the photogenerator (304 mA / W) modes. The influence of the concentration of H2O2 used in the second stage is crucial only for the photocurrent, which is not critical, and the influence of the AgNO3 concentration in the first stage of MACE does not have a significant effect on the parameters.