Abstract
Problem. Photosensitive sensors are widely used both in everyday life in climate systems and in communication devices and street lighting. In order to improve the performance parameters of photosensitive sensors, the use of silicon nanowires (SiNWs) has been proposed. A large number of articles are dedicated to the influence of synthesis parameters on the dimensions of SiNWs. However, there is a lack of research on the impact of the surface morphology of SiNW arrays on the electrical and photosensitive parameters of sensors based on them.The purpose of the work The aim of this work is to synthesize silicon nanowires using the metal-assisted chemical etching method, investigate their surface morphology, and fabricate photodiodes based on them to examine the influence of SiNW synthesis parameters on the characteristics of photosensitive sensors, considering the peculiarities of their structure.Research results. Photosensitive sensors of diode type based on SiNWs were synthesized and investigated. The influence of the following synthesis parameters of SiNWs on their lateral and vertical morphology as well as on characteristics of diode sensors based on them was demonstrated: the duration of the first and second stages of metal-assisted chemical etching (MACE), the content of silver nitride and hydrogen peroxide in the solutions of the first and second stages of MACE, as well as surface texturing and processing in isotropic and anisotropic etchants. The maximum operational parameters of the obtained photosensitivity sensors based on the SiNW array were as follows: rectification coefficient of 1320 and photosensitivity coefficient of 3.1 mA/lmV.Conclusions. The obtained results indicate that the technological parameters of the first and second stages of MACE, as well as pre- and post- chemical treatments, have a significant influence on increasing of the surface roughness, height, and porosity of SiNWs, which in turn affect the electric and photosensitive parameters of the sensors. Optimal SiNWs synthesis parameters for achieving of maximum photosensitivity have been established.
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