Application of silicon nanowires in sensors of temperature, light and humidity

Abstract

Resistive and capacitive types of sensors based on silicon nanowires (SiNWs) for measuring of physical quantities have been manufactured. Silicon nanowires were obtained through a two-step metal-assisted chemical etching (MACE) method. The surface morphology of the silicon nanowire array was investigated using atomic force microscopy (AFM) and scanning electron microscopy (SEM). The impact of SiNWs synthesis parameters on sensor sensitivity has been investigated. In particular, the influence of deposition time of AgNPs and etching time of silicon, as well as the content of H2O2 in the etchant, preliminary texturing of the substrate, and additional post-processing in isotropic/anisotropic etchant after the MACE process, on the characteristics of physical quantity sensors has been determined. Static and dynamic parameters were calculated for the obtained sensors. To compare the obtained sensors, physical sensors without SiNWs were manufactured. The highest response value for temperature sensors was 132, which is two orders of magnitude better than for sensors without SiNWs. The presence of SiNWs on the surface of the sensor led to an increase in the response value by about two orders of magnitude for all types of sensors. The speed of humidity sensors improved by 3–4 times, and for temperature and light sensors by an order of magnitude. Further device applications include of multi-parameter sensors, human breath sensors, and solar radiation power sensors.