Abstract
An array of InGaN-based flexible light-emitting diodes (FLEDs) was fabricated on a Ni-embedded electrical conducting flexible fabric with a full-scale 2-in. size. The FLED chip operation under current injection was realized using a single current probe as the negative electrode on the n-GaN surface; the conducting substrate was used as the positive electrode. The stability of the output power in the FLEDs was improved dramatically on the Ni-embedded conducting flexible fabric compared to that on the conventional polyimide flexible substrate. The former showed linear operation up to an input current 950mA with no wavelength shift, whereas the latter exhibited rolling-over behavior after an input current of 200mA.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
