Abstract

A much-simplified method of making flexible GaN blue light-emitting diode (LED) array on a plastic substrate was demonstrated. A sticky elastomeric stamp was first brought into contact with prefabricated GaN LED array on a sapphire substrate. Laser liftoff was applied by shining laser light through the sapphire substrate. The released LED array sitting on the stamp was transferred to a polyethylene terephthalate substrate that was coated with an adhesive layer to finish the fabrication process. Careful investigation of the built-in stress in the GaN LED layer using Raman spectroscopy revealed that the maximum stress that allows for intact GaN LED layer release and transfer was 0.7 GPa. The method drastically simplifies the cumbersome conventional GaN layer transferring method while preserving the original layout of the GaN LED array. Due to its simple and practical characteristics, the method is expected to greatly facilitate the development of versatile transferrable GaN LED applications on various substrates at a much-reduced cost.

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