Abstract
The light emission characteristics of blue strain-compensated InGaN/InGaN light emitting diodes (LEDs) grown on InGaN substrates were investigated using the multiband effective mass theory. The radiative recombination rate of the strain-compensated LED structure is shown to be larger than that of the conventional LED structure due to the decrease in the lattice mismatch with the substrate. Also, the light emission distribution in quantum wells (QWs) for the strain-compensated LED structure is found to be much more uniform than that for the conventional LED structure. As a result, the simulation results suggest that the efficiency droop is significantly improved when a conventional GaN barrier and substrate are replaced by an InGaN barrier and substrate. Thus, a possibility exists to employ a strain-compensated QW to improve the optical performance of InGaN-based blue LEDs.
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