Abstract
The efficiency droop characteristics of green strain-compensated InGaN/InGaN light-emitting diodes (LEDs) grown on an InGaN substrate are investigated by using the multi-band effective mass theory and drift-diffusion model. The radiative recombination coefficient Beff of the strain-compensated quantum well (QW) structure is shown to be much larger than that of the conventional QW structure. Also, we find that the effective active volume of the LEDs increases with the inclusion of strain-compensated layers. This can be explained by the fact that the overlap between electron and hole concentrations increases owing to the decrease in internal field. As a result, the efficiency droop phenomenon for the strain-compensated LEDs is expected to be reduced, compared with that for conventional LEDs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
