Abstract
We show the superior threshold voltage Vth and on resistance Ron stability of a SiC DMOStechnology at bipolar gate-drive operation. Therefore, the defect parameters of a two-state non-radiativemulti-phonon model to capture the charge trapping kinetics of oxide and interface defects is calibratedwithin our simulation framework Comphy by data extracted from measure-stress-measure (MSM) se-quences. An extrapolation of the device degradation at operating conditions renders bias temperatureinstabilities (BTI) a minor threat to on-state loss increase.
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