Abstract
Laser-induced breakdown spectroscopy (LIBS) has been employed for the fast and reliable chemical characterization of silicon used for the photovoltaic industry. Silicon for photovoltaic panels is subject to certain constraints on its purity, and notably must contain low concentration of boron. The use of LIBS could be advantageous because it allows rapid and simultaneous multi-elemental chemical analysis of silicon without any sample preparation. LIBS was applied to boron analysis and a detection limit of 0.23 ppmw was found for optimized gas and pressure conditions.
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