Abstract
<i>L</i><sub>G</sub> = 20 nm High Performance GaAs Substrate Based Metamorphic Metal Oxide Semiconductor High Electron Mobility Transistor for Next Generation High Speed Low Power Applications
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
