Abstract
With a well calibrated TCAD Simulator, this paper characterizes a novel n-AlGaN/GaN Metal Oxide Semiconductor High Electron Mobility Transistor (MOSHEMT) with a double gate symmetric underlapped structure. Detailed Analog, Power Gain and RF Parameters have been studied by varying the AlGaN doping concentration from undoped to 5x10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">18</sup> /cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sup> . These enhanced hetero-structures display superior performance in high frequency and low power applications compared to conventional HEMT and MOSFET devices.
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