Level excitation cross sections of Si I fragments produced by 100 eV electron impact on SiH4

Abstract

The fluorescence decay Si i atomic lines after electron impact excitation of SiH4 molecular gas was observed, and the level excitation cross sections (LECS) of Si i fragments were determined by separating the contribution from cascade transitions to line emissions. Observed transitions were 4s 1P–3p2 1D, 4s 3P–3p2 3P, 3d 1P–3p2 1S, 3d 1D–3p2 1D, 3d 1F–3p2 1D, 3d 3P–3p2 3P, and 3p3 3D–3p2 3P, for which the LECSs of the upper levels were determined at 100 eV excitation energy. The contribution of the direct excitations to these line emissions were found to range from 37% to 80%. Analysis of the 4s 1P–3p2 1D decay curve also gave the LECSs of the cascading levels 4p 1P, 4p 1S, and 4p 1D. Also obtained were some radiative lifetimes not reported before.