Less than 10 defects/cm2·μm in molecular beam epitaxy grown GaAs by arsenic cracking

Abstract

Drastic reduction of irregular defect density in molecular beam epitaxy (MBE) grown GaAs is obtained by using a novel arsenic Knudsen effusion cell with a cracking furnace. A surface defect density of less than 10 cm−2 is routinely achieved for continuously grown three 3-inch diameter, 1.7 μm thick, metal-semiconductor-field effect transistor (MESFET) structures when the cracking is carried out at about 700°C, which is the critical temperature for the conduction type change, and with the group III Knudsen cell only heated near the orifice of the crucible (top heat cell). These optimized cracking conditions also lead to successful mass production of some microwave devices with not only ultra-low defect density but suitable electrical performances.