Abstract
Post growth thermal annealing has been used to reduce the defect density of GaAs layers grown on Si substrates by molecular beam epitaxy. Transmission electron microscopy indicates a 100× reduction of the true defect density. Twins and stacking faults were eliminated entirely. Most misfit dislocations were confined within the first ∼150 Å GaAs layer and formed a regular and narrow network along the Si/GaAs interface. Similar results were obtained from an ion implanted and annealed specimen.
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