Leakage current of amorphous silicon p-i-n diodes made by ion shower doping

Abstract

In this letter, we report the leakage current of amorphous silicon (a-Si:H) p-i-n photodiodes, of which the p layer is formed by ion shower doping. The ion shower doping technique has an advantage over plasma-enhanced chemical vapor deposition (PECVD) in the fabrication of a large-area amorphous silicon flat-panel detector. The leakage current of the ion shower diodes shows a better uniformity within a 30 cm×40 cm substrate than that of the PECVD diodes. However, it shows a higher leakage current of 2–3 pA/mm2 at −5 V. This high current originates from the high injection current at the p-i junction.