Abstract
In recent years, it has become technically and economically feasible to use solid-state detector technology to display, store and transfer X-ray images. In this paper, we report the performance of a 33 cm /spl times/ 41 cm amorphous silicon flat panel detector (FPD) based on an ion shower doped P-I-N photodiode/thin-film transistor (TFT) array. The p-layer of a diode is formed by an ion shower doping method instead of the conventional plasma-enhanced chemical vapor deposition method. Measurements of X-ray imaging performances are reported for general imaging metrics such as modulation transfer function, noise power spectrum and detective quantum efficiency. The presampling MTF was found to be 0.51 and 0.26 at 1 lp/mm and 2 lp/mm. The measured DQE at 1 lp/mm and 2 lp/mm was 0.35 and 0.17.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
