Abstract

In this work, we investigate the polarization of the excitonics valley in MoS2-WS2 heterostructures using circular polarization-resolved photoluminescence. The valley polarization is the largest (≈28.45%) in the 1L-1L MoS2-WS2 heterostructure and the polarizability of AWS2 decreases as the number of WS2 layers increases. We further observed a redshift of exciton XMoS2- in MoS2-WS2 heterostructures with the increase of WS2 layers, which is attributed to the displacement of the MoS2 band edge, indicating the layer-sensitive optical properties of the MoS2-WS2 heterostructure. Our findings shed light on the understanding of exciton behavior in multilayer MoS2-WS2 heterostructures that may promote their potential applications in optoelectronic devices.

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