Abstract
Ultra thin silicon nitride layers with stoichiometric N Si ratios in the maximum of the depth distributions were produced by implanting 10 keV 15N 2 + ions into single-crystal silicon at RT under high vacuum conditions. The 15N depth distributions were measured by the resonant nuclear reaction 15N(p,αγ) 12C (NRA). The depth resolution at the surfaces of the specimens is 3 nm, if the tilt angle is 55°. The layer structure of the implanted region and the relevant real geometry was characterized by high resolution TEM. High-temperature stability of the 15N depth distribution in the implanted specimens was proved by electron beam rapid thermal annealing (EB-RTA) at 1100°C. The results obtained by NRA and TEM are in agreement.
Published Version
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