Nitrogen depth distribution, interface and structure analysis of SiNx layers produced by low-energy ion implantation

Abstract

Thin silicon nitride (SiN x ) layers with the stoichiometric N/Si ratio of 1.33 in the maximum of the concentration depth distributions of nitrogen were produced by implanting 10 kev 15 N 2 + in silicon at room temperature under high vacuum conditions. The depth distribution of the implanted isotope was measured by resonance nuclear reaction analysis (NRA), whereas the layer structure of the implanted region and the geometrical thickness of the layers were characterised by high resolution transmission electron microscopy (TEM). SiN x layers with a thickness of about 30 nm were determined by NRA. Channeling Rutherford backscattering spectrometry was used to determine the disorder in the silicon substrate. Sharp interfaces of a few nanometers between the highly, disordered implanted region and the crystalline structure of the substrate thickness were observed by TEM. The high thermal stability of SiN x layers with N/Si ratios from under to over stoichiometric could be shown by electron beam rapid thermal annealing (1100 C for 15 s, ramping up and down 5 C/s and NRA.